Compact, GaN-Based, 25kW 480VAC Bidirectional Inverter
Project Summary:
Electrical power converters are crucial in multi-source AC and DC energy systems, especially as demand rises for higher efficiency, reliability, flexibility, and cost and size reduction. Currently, multi-kilowatt converters use silicon (Si) and silicon carbide (SiC) technologies, but gallium nitride (GaN) devices, a new wide bandgap semiconductor, offer reduced losses, higher operating temperatures, and increased reliability. This project will develop a 25kW, 950VDC/480VAC three-level neutral point clamp (NPC) inverter using GaN field-effect transistors (FETs), advancing switching frequency and size reduction for applications in grid systems, automotive, and distributed generation.
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Technology Roadmap Target Area
Power Electronics Systems and Distributed Energy Resources.
Project Summary
Electrical power converters are crucial in multi-source AC and DC energy systems, especially as demand rises for higher efficiency, reliability, flexibility, and cost and size reduction. Currently, multi-kilowatt converters use silicon (Si) and silicon carbide (SiC) technologies, but gallium nitride (GaN) devices, a new wide bandgap semiconductor, offer reduced losses, higher operating temperatures, and increased reliability. This project will develop a 25kW, 950VDC/480VAC three-level neutral point clamp (NPC) inverter using GaN field-effect transistors (FETs), advancing switching frequency and size reduction for applications in grid systems, automotive, and distributed generation.
Technology Gap/Market Need:
The industry needs efficient, compact, reliable and low-cost power converters for various applications.
Target Application
Generation, Distribution, End Use, Power Packaging, Modeling and Control
Circuits and Converters, Smart Inverters, Solar Inverter, UPS, Battery Storage Systems
Accomplishments/Deliverables
- Designed compact 25kW, 480VAC grid connected bidirectional converter.
- Tested 3-phase 3L-ANPC benchtop controlled with FPGA and verified converter output.
- Determined the EMI noise sources and modeled common and differential modes
- Designed a PCB-based planar inductor to reduce size and tolerance on inductance
- Designed air-cooled heat sinks for GaN switches of 3L-ANPC at two sides of the board.
- Developed a compact 12”x11”x3” PCB board including all power elements.
Impact/Benefits
The outcomes of this project will generate valuable knowledge for GRAPES IAB and universities on high-frequency GaN-based converters. It will also establish a generalized process for designing and developing such converters, including control strategies, power stages, gate drives, EMI noise mitigation, and EMI filter design.

The developed converter

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